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IC Chemical Processing
IC Failure Analysis
FIB Application
ESD/Latch-up Test
 
 
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Circuit Modification
测试键生长
Cross section
FIB Application Range B
    测试键生长(Test Pad/Probing Pad Building)
    在复杂线路中任意位置镀出测试键, 工程师可进一步使用探针台(Probe station) 或 E-beam 直接观测IC内部信号.
----Direct Probing
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